IGBTs (Insulated Gate Bipolar Transistors) are voltage-controlled bipolar junction transistors realized by combining the front end of a MOSFET and the back end of a BJT (Bipolar Junction Transistor), offering the advantages of both. Like MOSFETs, IGBTs are voltage controlled and can be easily driven at higher frequencies. Like BJTs, IGBTs utilize the collector carrier injection effect to lower their resistance as the current increases, maintaining a constant low forward voltage independent of the collector current. This leads to its wide-spread adoption in very high-current applications, such as automotive and industrial motor drivers and power grids, among other applications.