SiC SBDs are known as Silicon Carbide Schottky Barrier Diodes. Thanks to their non-existent reverse recovery charge and very low parasitic capacitance, they have low forward voltage, low reverse leakage current and very low switching losses. They can operate reliably at higher temperatures than silicon diodes. Combined with their low losses, SiC SBDs are ideal for demanding applications such as in-vehicle chargers, power factor correction rectifiers, and other high-voltage, high-frequency applications.